Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

Yi Keng Fu; Bo Chun Chen; Yen Hsiang Fang; Ren Hao Jiang; Yu Hsuan Lu; Rong Xuan; Kai-Feng Huang; Chia Feng Lin; Yan Kuin Su; Jenn-Fang Chen; Chun-Yen Chang

doi:10.1109/LPT.2011.2161276

Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

Yi Keng Fu^*, Bo Chun Chen, Yen Hsiang Fang, Ren Hao Jiang, Yu Hsuan Lu, Rong Xuan, Kai-Feng Huang, Chia Feng Lin, Yan Kuin Su, Jenn-Fang Chen, Chun-Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.

Original language	English
Article number	5940992
Pages (from-to)	1373-1375
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2011.2161276
State	Published - 2011

Keywords

Chemical wet-etching
GaN
light extraction
near-ultraviolet (NUV) light-emitting diode (LED)

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10.1109/LPT.2011.2161276

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Fu, Y. K., Chen, B. C., Fang, Y. H., Jiang, R. H., Lu, Y. H., Xuan, R., Huang, K.-F., Lin, C. F., Su, Y. K., Chen, J.-F., & Chang, C.-Y. (2011). Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process. IEEE Photonics Technology Letters, 23(19), 1373-1375. Article 5940992. https://doi.org/10.1109/LPT.2011.2161276

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title = "Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process",

abstract = "The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.",

keywords = "Chemical wet-etching, GaN, light extraction, near-ultraviolet (NUV) light-emitting diode (LED)",

author = "Fu, {Yi Keng} and Chen, {Bo Chun} and Fang, {Yen Hsiang} and Jiang, {Ren Hao} and Lu, {Yu Hsuan} and Rong Xuan and Kai-Feng Huang and Lin, {Chia Feng} and Su, {Yan Kuin} and Jenn-Fang Chen and Chun-Yen Chang",

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doi = "10.1109/LPT.2011.2161276",

language = "English",

volume = "23",

pages = "1373--1375",

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issn = "1041-1135",

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T1 - Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

AU - Fu, Yi Keng

AU - Chen, Bo Chun

AU - Fang, Yen Hsiang

AU - Jiang, Ren Hao

AU - Lu, Yu Hsuan

AU - Xuan, Rong

AU - Huang, Kai-Feng

AU - Lin, Chia Feng

AU - Su, Yan Kuin

AU - Chen, Jenn-Fang

AU - Chang, Chun-Yen

PY - 2011

Y1 - 2011

N2 - The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.

AB - The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.

KW - Chemical wet-etching

KW - GaN

KW - light extraction

KW - near-ultraviolet (NUV) light-emitting diode (LED)

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U2 - 10.1109/LPT.2011.2161276

DO - 10.1109/LPT.2011.2161276

M3 - Article

AN - SCOPUS:80052610066

SN - 1041-1135

VL - 23

SP - 1373

EP - 1375

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

M1 - 5940992

ER -

Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

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