Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

Ming Ta Hsieh; Chan Ching Chang; Jenn-Fang Chen; Chin H. Chen

doi:10.1063/1.2345610

Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

Ming Ta Hsieh^*, Chan Ching Chang, Jenn-Fang Chen, Chin H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

The effect of tungsten oxide (WO₃) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO₃ volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 10¹⁴ to 1.90 × 10¹⁷ cm^-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.

Original language	English
Article number	103510
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2345610
State	Published - 18 Sep 2006

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title = "Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy",

abstract = "The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 1014 to 1.90 × 1017 cm-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.",

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T1 - Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

AU - Hsieh, Ming Ta

AU - Chang, Chan Ching

AU - Chen, Jenn-Fang

AU - Chen, Chin H.

PY - 2006/9/18

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N2 - The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 1014 to 1.90 × 1017 cm-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.

AB - The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97 × 1014 to 1.90 × 1017 cm-3 and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region.

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Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino] -4,4′ diamine doped with tungsten oxide by admittance spectroscopy

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