Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Wei Li Lee, Jun Lin Zhang, Ming Li Tsai, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this study, we employed low-pressure oxidation (LPO) to achieve a high-quality dielectric gate stack on high-Ge-content (HGC) Si0 16Ge0.84. According to X-ray photoelectron spectroscopy depth-profiling results, lowering the oxidation pressure can drive out-diffusion of Si atoms from the HGC SiGe surface, resulting in the suppression of GeOx formation. A nearly GeOx-free interfacial layer detected at anO2 pressure of 0.01 torr at 600°Cwas used.Consequently, the formation of stable SiOx resulted in the improvement of Dit and gate leakage current, which in accumulation (VFB-1V) was also considerably reduced with an equivalent oxide thickness of 1.5 nm. Finally, by applying the LPO process and optimized process conditions, the interface trap density (Dit) was reduced to 2 × 1012 eV-1cm-2

Original languageEnglish
Pages (from-to)P73-P76
JournalECS Journal of Solid State Science and Technology
Issue number2
StatePublished - Jan 2018


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