Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Ming Ta Hsieh; Meng Huan Ho; Kuan Heng Lin; Jenn-Fang Chen; Teng-Ming Chen; Chin H. Chen

doi:10.1063/1.3173824

Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Ming Ta Hsieh^*, Meng Huan Ho, Kuan Heng Lin, Jenn-Fang Chen, Teng-Ming Chen, Chin H. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO ₃) has been developed. The admittance spectroscopy studies show that the incorporation of WO₃ into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm². This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

Original language	English
Article number	033501
Journal	Applied Physics Letters
Volume	95
Issue number	3
DOIs	https://doi.org/10.1063/1.3173824
State	Published - 2009

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title = "Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer",

abstract = "An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.",

author = "Hsieh, {Ming Ta} and Ho, {Meng Huan} and Lin, {Kuan Heng} and Jenn-Fang Chen and Teng-Ming Chen and Chen, {Chin H.}",

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T1 - Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

AU - Hsieh, Ming Ta

AU - Ho, Meng Huan

AU - Lin, Kuan Heng

AU - Chen, Jenn-Fang

AU - Chen, Teng-Ming

AU - Chen, Chin H.

PY - 2009

Y1 - 2009

N2 - An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

AB - An efficient p -doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO 3) has been developed. The admittance spectroscopy studies show that the incorporation of WO3 into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p -doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/ cm2. This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

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Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

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