Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

Ming Ta Hsieh; Meng Huan Ho; Kuan Heng Lin; Jenn-Fang Chen; Teng-Ming Chen; Chin H. Chen

doi:10.1063/1.3377921

Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

Ming Ta Hsieh^*, Meng Huan Ho, Kuan Heng Lin, Jenn-Fang Chen, Teng-Ming Chen, Chin H. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.

Original language	English
Article number	133310
Journal	Applied Physics Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1063/1.3377921
State	Published - 12 Apr 2010

Access to Document

10.1063/1.3377921

Cite this

@article{cc99e2b808d342cd8e64652f67e67663,

title = "Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy",

abstract = "In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.",

author = "Hsieh, {Ming Ta} and Ho, {Meng Huan} and Lin, {Kuan Heng} and Jenn-Fang Chen and Teng-Ming Chen and Chen, {Chin H.}",

year = "2010",

month = apr,

day = "12",

doi = "10.1063/1.3377921",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

AU - Hsieh, Ming Ta

AU - Ho, Meng Huan

AU - Lin, Kuan Heng

AU - Chen, Jenn-Fang

AU - Chen, Teng-Ming

AU - Chen, Chin H.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.

AB - In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.

UR - http://www.scopus.com/inward/record.url?scp=77950501822&partnerID=8YFLogxK

U2 - 10.1063/1.3377921

DO - 10.1063/1.3377921

M3 - Article

AN - SCOPUS:77950501822

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133310

ER -

Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this