Keyphrases
AlGaN-GaN
100%
Aluminum Gallium Nitride (AlGaN)
16%
Capacitance-voltage
16%
Capacitors
16%
Composite Oxide
16%
Delay Time
16%
Drain Bias Stress
16%
Enhancement-mode (E-mode)
100%
Film Quality
16%
Gate Insulator
100%
High Breakdown Voltage
16%
High Current Density
16%
High Electron Mobility Transistor
100%
High Power Applications
16%
Hysteresis Effect
16%
Interface Properties
16%
ION-IOFF
16%
La-silicate
100%
La2O3
33%
Low Subthreshold Swing
16%
Maximum Transconductance
16%
MIS-HEMT
16%
On-resistance
33%
Oxide Film
16%
Post-deposition Annealing
16%
Power Applications
100%
Power Electronics Applications
16%
Silica
16%
SiO2 Composite
16%
Stress Testing
16%
Threshold Voltage
16%
Engineering
Breakdown Voltage
50%
Delay Time
50%
Drain Bias
50%
Film Quality
50%
High Current Density
50%
Hysteresis Effect
50%
Oxide Film
50%
Power Electronics
50%
Silicon Dioxide
100%
Material Science
Annealing
16%
Capacitor
16%
Composite Material
16%
Density
16%
Electron Mobility
100%
Interface Property
16%
Oxide Compound
16%
Oxide Film
16%
Silicate
100%
Stress Analysis
16%
Transistor
100%
Earth and Planetary Sciences
Current Density
33%
High Current
33%
High Electron Mobility Transistors
100%
Management Information System
33%
Oxide Film
33%
Threshold Voltage
33%
Transconductance
33%
Physics
High Electron Mobility Transistors
100%
Interface Property
33%
Management Information System
33%
Oxide Film
33%
Threshold Voltage
33%