Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

L. P. Chen; T. C. Chou; Chao-Hsin Chien; C. Y. Chang

doi:10.1063/1.116470

Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

L. P. Chen^*, T. C. Chou, Chao-Hsin Chien, C. Y. Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750°C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2.

Original language	English
Pages (from-to)	232-234
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	2
DOIs	https://doi.org/10.1063/1.116470
State	Published - 1 Dec 1995

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title = "Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing",

abstract = "High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750°C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2.",

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T1 - Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

AU - Chen, L. P.

AU - Chou, T. C.

AU - Chien, Chao-Hsin

AU - Chang, C. Y.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750°C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2.

AB - High quality metastable pseudomorphic Si1-xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750°C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2.

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Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

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