Structure effects on inter- And intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa 1-xAs/GaAs quantum wells

H. C. Lee*, Kien-Wen Sun, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Based on the dielectric continuum model, we have studied the dependence of electron-optical phonon scattering rates in GaAs/Alxa 1-xAs quantum wells with different structure parameters. It was found that the dependence of scattering rates of symmetric interface mode on Al composition in the barrier was stronger than that of the confined mode. The average phonon energy emitted by hot electrons in GaAs/AlxGa 1-xAs quantum wells with various Al composition was estimated and the calculated value agrees with the experimental results qualitatively. For the dependence on the well width, scattering rates of the S+ mode dropped considerably as the well width is increased. The hot electron-neutral acceptor luminescence spectrum of the strained InxGa1-xAs/GaAs quantum well sample shows an oscillation period of about 22 meV which indicates that the hot electrons relaxed mostly through emissions of the InAs confined phonons.

Original languageEnglish
Pages (from-to)204-208
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5023
DOIs
StatePublished - 15 Sep 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 17 Jun 200221 Jun 2002

Keywords

  • Hot electron
  • Inter-subband scattering
  • Neutral acceptor
  • Optical phonon
  • Quantum wells

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