Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0)

X. Wu*, D. Landheer, M. J. Graham, H. W. Chen, T. Y. Huang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The structure and thermal stability of ZrO2 films grown on Si (100) substrates by metalorganic chemical vapor deposition have been studied by high-resolution transmission electron microscopy, selected area electron diffraction and X-ray energy dispersive spectroscopy. As-deposited films consist of tetragonal ZrO2 nanocrystallites and an amorphous Zr silicate interfacial layer. After annealing at 850°C, some monoclinic phase is formed, and the grain size is increased. Annealing a ∼ 6 nm thick film at 850°C in O2 revealed that the growth of the interfacial layer is at the expense of the ZrO2 layer. In a 3.0nm thick Zr silicate interfacial layer, there is a 0.9nm Zr-free SiO2 region right above the Si substrate. These observations suggest that oxygen reacted with the Si substrate to grow SiO2, and SiO2 reacted with ZrO2 to form a Zr silicate interfacial layer during the deposition and annealing. Oxygen diffusion through the tetragonal ZrO2 phase was found to be relatively easier than through the monoclinic phase.

Original languageEnglish
Pages (from-to)479-485
Number of pages7
JournalJournal of Crystal Growth
Issue number3-4
StatePublished - 1 Apr 2003


  • A1. Interfaces
  • A1. Transmission electron microscopy
  • A3. Metalorganic chemical vapor deposition
  • B2. Dielectric materials


Dive into the research topics of 'Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0)'. Together they form a unique fingerprint.

Cite this