Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

Nidhi Tiwari; Han Ping D. Shieh; Po-Tsun Liu

doi:10.1016/j.matlet.2015.03.043

Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

Nidhi Tiwari^*, Han Ping D. Shieh, Po-Tsun Liu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Abstract Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 °C reveal smaller sub-threshold swing (SS∼0.52 V/dec) and threshold voltage (V _th ∼1.3 V) than the TFTs (SS∼0.82 V/dec, V _th ∼13.3 V) of a-IGZO thin film annealed at the same temperature.

Original language	English
Article number	18635
Pages (from-to)	53-56
Number of pages	4
Journal	Materials Letters
Volume	151
DOIs	https://doi.org/10.1016/j.matlet.2015.03.043
State	Published - 15 Jul 2015

Keywords

Semiconductor
Sputtering
Thin films

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10.1016/j.matlet.2015.03.043

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@article{4ee60d1cf5f94c5c8f77bb0d4eac0089,

title = "Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application",

abstract = " Abstract Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 °C reveal smaller sub-threshold swing (SS∼0.52 V/dec) and threshold voltage (V th ∼1.3 V) than the TFTs (SS∼0.82 V/dec, V th ∼13.3 V) of a-IGZO thin film annealed at the same temperature. ",

keywords = "Semiconductor, Sputtering, Thin films",

author = "Nidhi Tiwari and Shieh, {Han Ping D.} and Po-Tsun Liu",

year = "2015",

month = jul,

day = "15",

doi = "10.1016/j.matlet.2015.03.043",

language = "English",

volume = "151",

pages = "53--56",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

AU - Tiwari, Nidhi

AU - Shieh, Han Ping D.

AU - Liu, Po-Tsun

PY - 2015/7/15

Y1 - 2015/7/15

N2 - Abstract Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 °C reveal smaller sub-threshold swing (SS∼0.52 V/dec) and threshold voltage (V th ∼1.3 V) than the TFTs (SS∼0.82 V/dec, V th ∼13.3 V) of a-IGZO thin film annealed at the same temperature.

AB - Abstract Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 °C reveal smaller sub-threshold swing (SS∼0.52 V/dec) and threshold voltage (V th ∼1.3 V) than the TFTs (SS∼0.82 V/dec, V th ∼13.3 V) of a-IGZO thin film annealed at the same temperature.

KW - Semiconductor

KW - Sputtering

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84950170917&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2015.03.043

DO - 10.1016/j.matlet.2015.03.043

M3 - Article

AN - SCOPUS:84950170917

SN - 0167-577X

VL - 151

SP - 53

EP - 56

JO - Materials Letters

JF - Materials Letters

M1 - 18635

ER -

Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

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