TY - JOUR
T1 - Structural evolution of AlN nano-structures
T2 - Nanotips and nanorods
AU - Shi, Shih Chen
AU - Chattopadhyay, Surojit
AU - Chen, Chia Fu
AU - Chen, Kuei Hsien
AU - Chen, Li Chyong
PY - 2006/1/25
Y1 - 2006/1/25
N2 - Aluminum nitride (AlN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 °C, AlN nanotips with apex diameters of 10 nm, base diameters of ∼100 nm, and length of ∼2000 nm were obtained. Whereas when the growth temperature was 1200 °C, we obtained shorter and thicker AlN nanorods. Compelling microscopic evidences were obtained to show that stacked AlN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich-Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AlN nanorods at increasing growth temperatures.
AB - Aluminum nitride (AlN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 °C, AlN nanotips with apex diameters of 10 nm, base diameters of ∼100 nm, and length of ∼2000 nm were obtained. Whereas when the growth temperature was 1200 °C, we obtained shorter and thicker AlN nanorods. Compelling microscopic evidences were obtained to show that stacked AlN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich-Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AlN nanorods at increasing growth temperatures.
UR - http://www.scopus.com/inward/record.url?scp=30344488464&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2005.10.107
DO - 10.1016/j.cplett.2005.10.107
M3 - Article
AN - SCOPUS:30344488464
SN - 0009-2614
VL - 418
SP - 152
EP - 157
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -