Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang; Po-Tsun Liu; T. S. Chang; T. C. Chang; L. J. Chen

doi:10.1016/j.tsf.2004.09.014

Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang
, Po-Tsun Liu
, T. S. Chang
, T. C. Chang
, L. J. Chen^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO₂ at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Thin Solid Films
Volume	469-470
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.09.014
State	Published - 22 Dec 2004

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Keywords

Copper silicide
Dielectric constant
Porous polysilazane

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10.1016/j.tsf.2004.09.014

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@article{90fa026ce5c447a3b5bb9ee278f5ff17,

title = "Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization",

abstract = "The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.",

keywords = "Copper silicide, Dielectric constant, Porous polysilazane",

author = "Wang, \{J. H.\} and Po-Tsun Liu and Chang, \{T. S.\} and Chang, \{T. C.\} and Chen, \{L. J.\}",

year = "2004",

month = dec,

day = "22",

doi = "10.1016/j.tsf.2004.09.014",

language = "English",

volume = "469-470",

pages = "393--397",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

AU - Wang, J. H.

AU - Liu, Po-Tsun

AU - Chang, T. S.

AU - Chang, T. C.

AU - Chen, L. J.

PY - 2004/12/22

Y1 - 2004/12/22

N2 - The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

AB - The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

KW - Copper silicide

KW - Dielectric constant

KW - Porous polysilazane

UR - https://www.scopus.com/pages/publications/10044288327

U2 - 10.1016/j.tsf.2004.09.014

DO - 10.1016/j.tsf.2004.09.014

M3 - Article

AN - SCOPUS:10044288327

SN - 0040-6090

VL - 469-470

SP - 393

EP - 397

JO - Thin Solid Films

JF - Thin Solid Films

IS - SPEC. ISS.

ER -

Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

Abstract

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Keywords

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