Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

I. P. Soshnikov^*, A. R. Kovsh, V. M. Ustinov, N. V. Kryzhanovskaya, N. N. Ledentsov, D. Bimberg, H. Kirmse, W. Neumann, O. M. Gorbenko, Kuo-Jui Lin, J. Wang, R. S. Shiao, J. Chi

^*Corresponding author for this work