Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

I. P. Soshnikov; A. R. Kovsh; V. M. Ustinov; N. V. Kryzhanovskaya; N. N. Ledentsov; D. Bimberg; H. Kirmse; W. Neumann; O. M. Gorbenko; Kuo-Jui Lin; J. Wang; R. S. Shiao; J. Chi

doi:10.1088/0268-1242/19/3/038

Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

I. P. Soshnikov^*, A. R. Kovsh, V. M. Ustinov, N. V. Kryzhanovskaya, N. N. Ledentsov, D. Bimberg, H. Kirmse, W. Neumann, O. M. Gorbenko, Kuo-Jui Lin, J. Wang, R. S. Shiao, J. Chi

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ∼ 1.4-1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN-GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.

Original language	English
Pages (from-to)	501-504
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/19/3/038
State	Published - 2 Feb 2004

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Soshnikov, I. P., Kovsh, A. R., Ustinov, V. M., Kryzhanovskaya, N. V., Ledentsov, N. N., Bimberg, D., Kirmse, H., Neumann, W., Gorbenko, O. M., Lin, K.-J., Wang, J., Shiao, R. S., & Chi, J. (2004). Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization. Semiconductor Science and Technology, 19(3), 501-504. https://doi.org/10.1088/0268-1242/19/3/038

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title = "Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization",

abstract = "In this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ∼ 1.4-1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN-GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.",

author = "Soshnikov, {I. P.} and Kovsh, {A. R.} and Ustinov, {V. M.} and Kryzhanovskaya, {N. V.} and Ledentsov, {N. N.} and D. Bimberg and H. Kirmse and W. Neumann and Gorbenko, {O. M.} and Kuo-Jui Lin and J. Wang and Shiao, {R. S.} and J. Chi",

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Soshnikov, IP, Kovsh, AR, Ustinov, VM, Kryzhanovskaya, NV, Ledentsov, NN, Bimberg, D, Kirmse, H, Neumann, W, Gorbenko, OM, Lin, K-J, Wang, J, Shiao, RS & Chi, J 2004, 'Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization', Semiconductor Science and Technology, vol. 19, no. 3, pp. 501-504. https://doi.org/10.1088/0268-1242/19/3/038

TY - JOUR

T1 - Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

AU - Soshnikov, I. P.

AU - Kovsh, A. R.

AU - Ustinov, V. M.

AU - Kryzhanovskaya, N. V.

AU - Ledentsov, N. N.

AU - Bimberg, D.

AU - Kirmse, H.

AU - Neumann, W.

AU - Gorbenko, O. M.

AU - Lin, Kuo-Jui

AU - Wang, J.

AU - Shiao, R. S.

AU - Chi, J.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - In this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ∼ 1.4-1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN-GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.

AB - In this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ∼ 1.4-1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN-GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.

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AN - SCOPUS:12144286810

SN - 0268-1242

VL - 19

SP - 501

EP - 504

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

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