Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu; Li Chang; P. Y. Lin; C. H. Chiang; Jenn-Fang Chen; T. W. Chi

doi:10.1088/0022-3727/42/18/185106

Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu, Li Chang, P. Y. Lin, C. H. Chiang, Jenn-Fang Chen, T. W. Chi

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we investigated the effect of a 1 nm thick GaAs _94.3Sb_0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

Original language	English
Article number	185106
Number of pages	5
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	18
DOIs	https://doi.org/10.1088/0022-3727/42/18/185106
State	Published - 21 Sep 2009

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title = "Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer",

abstract = "In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.",

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AU - Wu, Y. H.

AU - Chang, Li

AU - Lin, P. Y.

AU - Chiang, C. H.

AU - Chen, Jenn-Fang

AU - Chi, T. W.

PY - 2009/9/21

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AB - In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

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Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

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