Structural and optical analyses for InGaN-based red micro-LED

Fu He Hsiao; Wen Chien Miao; Yu Heng Hong; Hsin Chiang; I. Hung Ho; Kai Bo Liang; Daisuke Iida; Chun Liang Lin; Hyeyoung Ahn; Kazuhiro Ohkawa; Chiao Yun Chang; Hao Chung Kuo

doi:10.1186/s11671-023-03853-1

Structural and optical analyses for InGaN-based red micro-LED

Fu He Hsiao, Wen Chien Miao, Yu Heng Hong, Hsin Chiang, I. Hung Ho, Kai Bo Liang, Daisuke Iida, Chun Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao Yun Chang^*, Hao Chung Kuo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Original language	English
Article number	77
Journal	Discover Nano
Volume	18
Issue number	1
DOIs	https://doi.org/10.1186/s11671-023-03853-1
State	Published - Dec 2023

Keywords

Emission efficiency
Micro-LED
Photoluminescence
Red InGaN-based LED
V-pits

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10.1186/s11671-023-03853-1

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title = "Structural and optical analyses for InGaN-based red micro-LED",

abstract = "This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.",

keywords = "Emission efficiency, Micro-LED, Photoluminescence, Red InGaN-based LED, V-pits",

author = "Hsiao, {Fu He} and Miao, {Wen Chien} and Hong, {Yu Heng} and Hsin Chiang and Ho, {I. Hung} and Liang, {Kai Bo} and Daisuke Iida and Lin, {Chun Liang} and Hyeyoung Ahn and Kazuhiro Ohkawa and Chang, {Chiao Yun} and Kuo, {Hao Chung}",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s).",

year = "2023",

month = dec,

doi = "10.1186/s11671-023-03853-1",

language = "English",

volume = "18",

journal = "Discover Nano",

issn = "2731-9229",

publisher = "Springer",

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TY - JOUR

T1 - Structural and optical analyses for InGaN-based red micro-LED

AU - Hsiao, Fu He

AU - Miao, Wen Chien

AU - Hong, Yu Heng

AU - Chiang, Hsin

AU - Ho, I. Hung

AU - Liang, Kai Bo

AU - Iida, Daisuke

AU - Lin, Chun Liang

AU - Ahn, Hyeyoung

AU - Ohkawa, Kazuhiro

AU - Chang, Chiao Yun

AU - Kuo, Hao Chung

PY - 2023/12

Y1 - 2023/12

N2 - This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

AB - This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

KW - Emission efficiency

KW - Micro-LED

KW - Photoluminescence

KW - Red InGaN-based LED

KW - V-pits

UR - http://www.scopus.com/inward/record.url?scp=85160213653&partnerID=8YFLogxK

U2 - 10.1186/s11671-023-03853-1

DO - 10.1186/s11671-023-03853-1

M3 - Article

AN - SCOPUS:85160213653

SN - 2731-9229

VL - 18

JO - Discover Nano

JF - Discover Nano

IS - 1

M1 - 77

ER -

Structural and optical analyses for InGaN-based red micro-LED

Abstract

Keywords

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