Structural and optical analyses for InGaN-based red micro-LED

Fu He Hsiao, Wen Chien Miao, Yu Heng Hong, Hsin Chiang, I. Hung Ho, Kai Bo Liang, Daisuke Iida, Chun Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao Yun Chang*, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Original languageEnglish
Article number77
JournalDiscover Nano
Issue number1
StatePublished - Dec 2023


  • Emission efficiency
  • Micro-LED
  • Photoluminescence
  • Red InGaN-based LED
  • V-pits


Dive into the research topics of 'Structural and optical analyses for InGaN-based red micro-LED'. Together they form a unique fingerprint.

Cite this