Structural and electrical properties of high-k HoTiO3 gate dielectrics

Tung Ming Pan; Li Chen Yen; Chia Wei Hu; Tien-Sheng Chao

doi:10.1149/1.3375607

Structural and electrical properties of high-k HoTiO₃ gate dielectrics

Tung Ming Pan^*, Li Chen Yen, Chia Wei Hu, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We developed a high-k HoTiO₃ gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO₃ dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO₃ structure and composition.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	241-245
Number of pages	5
Edition	1
DOIs	https://doi.org/10.1149/1.3375607
State	Published - 30 Dec 2010
Event	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 26 Apr 2010 → 27 Apr 2010

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
Country/Territory	Canada
City	Vancouver, BC
Period	26/04/10 → 27/04/10

Access to Document

10.1149/1.3375607

Cite this

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title = "Structural and electrical properties of high-k HoTiO3 gate dielectrics",

abstract = "We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.",

author = "Pan, {Tung Ming} and Yen, {Li Chen} and Hu, {Chia Wei} and Tien-Sheng Chao",

year = "2010",

month = dec,

day = "30",

doi = "10.1149/1.3375607",

language = "English",

isbn = "9781566777919",

series = "ECS Transactions",

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pages = "241--245",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",

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note = "Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting ; Conference date: 26-04-2010 Through 27-04-2010",

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Pan, TM, Yen, LC, Hu, CW & Chao, T-S 2010, Structural and electrical properties of high-k HoTiO₃ gate dielectrics. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, pp. 241-245, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting, Vancouver, BC, Canada, 26/04/10. https://doi.org/10.1149/1.3375607

Structural and electrical properties of high-k HoTiO₃ gate dielectrics. / Pan, Tung Ming; Yen, Li Chen; Hu, Chia Wei et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. 2010. p. 241-245 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.

AB - We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.

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