@inproceedings{96f1787a64a64c2d986725ead291b62b,
title = "Structual design of T-gate, air-spacer poly-Si TFTs for RF applications",
abstract = "We employed Sentaurus TCAD simulation to explore the impacts of major structural parameters on the electrical characteristics of poly-Si TFTs with T-gate and air spacers. The effects and trade-off between the source/drain (S/D) junctions relative to T-gate are discussed with the aim to find insightful information for the design and fabrication of real devices. Influences of the gate geometry on the parasitic capacitances of the T-gate devices are also simulated.",
author = "Huang, {Yu An} and Yeh, {Yu Hsiang} and Lin, {Horng Chih} and Li, {Pei Wen}",
note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",
year = "2019",
month = jun,
doi = "10.23919/SNW.2019.8782904",
language = "English",
series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
address = "美國",
}