Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment

Tin Yu Ko; Yu Lin Liu; Kien-Wen Sun; Yi Jie Lin; Shih Chieh Fong; I. Nan Lin; Nyan Hwa Tai

doi:10.1016/j.diamond.2013.03.009

Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment

Tin Yu Ko, Yu Lin Liu, Kien-Wen Sun^*, Yi Jie Lin, Shih Chieh Fong, I. Nan Lin, Nyan Hwa Tai

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.

Original language	English
Pages (from-to)	36-39
Number of pages	4
Journal	Diamond and Related Materials
Volume	35
DOIs	https://doi.org/10.1016/j.diamond.2013.03.009
State	Published - 2013

Keywords

Color center
Nitrogen vacancy
Photoluminescence
Plasma
Ultrananocrystalline diamond

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10.1016/j.diamond.2013.03.009

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title = "Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment",

abstract = "Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.",

keywords = "Color center, Nitrogen vacancy, Photoluminescence, Plasma, Ultrananocrystalline diamond",

author = "Ko, {Tin Yu} and Liu, {Yu Lin} and Kien-Wen Sun and Lin, {Yi Jie} and Fong, {Shih Chieh} and Lin, {I. Nan} and Tai, {Nyan Hwa}",

year = "2013",

doi = "10.1016/j.diamond.2013.03.009",

language = "English",

volume = "35",

pages = "36--39",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment

AU - Ko, Tin Yu

AU - Liu, Yu Lin

AU - Sun, Kien-Wen

AU - Lin, Yi Jie

AU - Fong, Shih Chieh

AU - Lin, I. Nan

AU - Tai, Nyan Hwa

PY - 2013

Y1 - 2013

N2 - Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.

AB - Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.

KW - Color center

KW - Nitrogen vacancy

KW - Photoluminescence

KW - Plasma

KW - Ultrananocrystalline diamond

UR - http://www.scopus.com/inward/record.url?scp=84876213209&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2013.03.009

DO - 10.1016/j.diamond.2013.03.009

M3 - Article

AN - SCOPUS:84876213209

SN - 0925-9635

VL - 35

SP - 36

EP - 39

JO - Diamond and Related Materials

JF - Diamond and Related Materials

ER -

Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment

Abstract

Keywords

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