Stressor design for FinFETs with air-gap spacers

Darsen D. Lu, Angada B. Sachid, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Min Cheng Chen, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
StatePublished - 7 Jun 2017
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 24 Apr 201727 Apr 2017

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Country/TerritoryTaiwan
CityHsinchu
Period24/04/1727/04/17

Fingerprint

Dive into the research topics of 'Stressor design for FinFETs with air-gap spacers'. Together they form a unique fingerprint.

Cite this