Stress in liquid-phase deposited oxide films

CF Yeh; Shumin Lin; WT Lur

doi:10.1149/1.1837065

Stress in liquid-phase deposited oxide films

CF Yeh^*, Shumin Lin, WT Lur

^*Corresponding author for this work

Institute of Teaching English to Speakers of Other Languages

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

To To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.

Original language	English
Pages (from-to)	2658-2662
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	8
DOIs	https://doi.org/10.1149/1.1837065
State	Published - Aug 1996

Keywords

CHEMICAL VAPOR-DEPOSITION
GATE-INSULATOR
GLASS-FILMS
SILICON
PLASMA
SIO2-FILMS
SIO2-XFX
GROWTH
SI
RESISTANCE

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title = "Stress in liquid-phase deposited oxide films",

abstract = "To To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.",

keywords = "CHEMICAL VAPOR-DEPOSITION, GATE-INSULATOR, GLASS-FILMS, SILICON, PLASMA, SIO2-FILMS, SIO2-XFX, GROWTH, SI, RESISTANCE",

author = "CF Yeh and Shumin Lin and WT Lur",

year = "1996",

month = aug,

doi = "10.1149/1.1837065",

language = "English",

volume = "143",

pages = "2658--2662",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Stress in liquid-phase deposited oxide films

AU - Yeh, CF

AU - Lin, Shumin

AU - Lur, WT

PY - 1996/8

Y1 - 1996/8

N2 - To To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.

AB - To To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.

KW - CHEMICAL VAPOR-DEPOSITION

KW - GATE-INSULATOR

KW - GLASS-FILMS

KW - SILICON

KW - PLASMA

KW - SIO2-FILMS

KW - SIO2-XFX

KW - GROWTH

KW - SI

KW - RESISTANCE

U2 - 10.1149/1.1837065

DO - 10.1149/1.1837065

M3 - Article

SN - 0013-4651

VL - 143

SP - 2658

EP - 2662

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Stress in liquid-phase deposited oxide films

Abstract

Keywords

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