Stress and defect distribution of thick GaN film homoepitaxially regrown on free-standing GaN by hydride vapor phase epitaxy

Kuei Ming Chen*, Yen Hsien Yeh, Yin Hao Wu, Chen Hao Chiang, Din Ru Yang, Zhong Shan Gao, Chu Li Chao, Tung Wei Chi, Yen Hsang Fang, Jenq Dar Tsay, Wei-I Lee

*Corresponding author for this work

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