Stress analysis of trench isolation structure in advanced bipolar LSIs

Y. Katsumata*, I. Katakabe, N. Itoh, E. Tsukioka, C. Yoshino, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

The mechanical stress distribution around the trench isolation of bipolar devices was evaluated in the cross-sectional plane, both by a two-dimensional stress simulation and by two-dimensional Raman spectroscopy. The results obtained by the different methods agreed well quantitatively. It was confirmed that the stress value reaches a local maximum at the bottom of the trench structure, and this stress is sufficiently high to sometimes generate crystal defects. The electrical characteristics of an 850-diode-junction array isolated by trench isolation further support the simulated and measured distributions. It is concluded that stress simulation, in combination with Raman spectroscopy measurements, is a very important tool for analyzing mechanical stress around the trench, and thus for improving isolation structures.

Original languageEnglish
Title of host publicationProceedings of the 1991 Bipolar Circuits and Technology Meeting
PublisherPubl by IEEE
Pages271-274
Number of pages4
ISBN (Print)078030103X
StatePublished - 1992
EventProceedings of the 1991 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 9 Sep 199110 Sep 1991

Publication series

NameProceedings of the 1991 Bipolar Circuits and Technology Meeting

Conference

ConferenceProceedings of the 1991 Bipolar Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period9/09/9110/09/91

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