Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu; Min An Tsai; Ching Hua Chiu; Hao-Chung Kuo; Yuh Renn Wu

doi:10.1117/12.804065

Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu^*, Min An Tsai, Ching Hua Chiu, Hao-Chung Kuo, Yuh Renn Wu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

Original language	English
Article number	71351Y
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7135
DOIs	https://doi.org/10.1117/12.804065
State	Published - 1 Dec 2008
Event	Optoelectronic Materials and Devices III - Hangzhou, China Duration: 27 Oct 2008 → 30 Oct 2008

Keywords

Focused ion beam
InGaN/GaN
Nanopillar
Strain relaxation

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10.1117/12.804065

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title = "Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling",

abstract = "A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.",

keywords = "Focused ion beam, InGaN/GaN, Nanopillar, Strain relaxation",

author = "Peichen Yu and Tsai, {Min An} and Chiu, {Ching Hua} and Hao-Chung Kuo and Wu, {Yuh Renn}",

year = "2008",

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TY - JOUR

T1 - Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

AU - Yu, Peichen

AU - Tsai, Min An

AU - Chiu, Ching Hua

AU - Kuo, Hao-Chung

AU - Wu, Yuh Renn

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

AB - A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

KW - Focused ion beam

KW - InGaN/GaN

KW - Nanopillar

KW - Strain relaxation

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U2 - 10.1117/12.804065

DO - 10.1117/12.804065

M3 - Conference article

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VL - 7135

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 71351Y

T2 - Optoelectronic Materials and Devices III

Y2 - 27 October 2008 through 30 October 2008

ER -

Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

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Keywords

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