Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Jenn-Fang Chen; R. S. Hsiao; W. D. Huang; Y. H. Wu; Li Chang; J. S. Wang; J. Y. Chi

doi:10.1063/1.2212064

Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Jenn-Fang Chen^*, R. S. Hsiao, W. D. Huang, Y. H. Wu, Li Chang, J. S. Wang, J. Y. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The onset of strain relaxation and induced defects in In As0.94 Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots.

Original language	English
Article number	233113
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	23
DOIs	https://doi.org/10.1063/1.2212064
State	Published - 5 Jun 2006

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AU - Chen, Jenn-Fang

AU - Hsiao, R. S.

AU - Huang, W. D.

AU - Wu, Y. H.

AU - Chang, Li

AU - Wang, J. S.

AU - Chi, J. Y.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - The onset of strain relaxation and induced defects in In As0.94 Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots.

AB - The onset of strain relaxation and induced defects in In As0.94 Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots.

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

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Strain relaxation and induced defects in InAsSb self-assembled quantum dots

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