Stochastic Switching in a Magnetic-Tunnel-Junction Neuron and a Bias-Dependent Néel-Arrhenius Model

Keyphrases

• Bias Dependence 100%
• Magnetic Tunnel Junction 100%
• Stochastic Switching 100%
• Arrhenius Model 100%
• Spike Frequency 60%
• High Bias 40%
• Duty Cycle 20%
• Neural Network 20%
• Compact Model 20%
• Ferromagnetic Phase 20%
• Design Guidelines 20%
• Switching Phenomenon 20%
• Oscillation 20%
• Memory Storage 20%
• Energy Reduction 20%
• Arrhenius 20%
• Energy Barrier 20%
• Curie Temperature 20%
• Transition Time 20%
• Self-heating Effect 20%
• Perpendicular Magnetic Anisotropy 20%
• Applied Bias Voltage 20%
• Fundamental Building Blocks 20%
• Bistate 20%
• Spiking Neural Networks 20%
• Gigahertz Range 20%
• Backhopping 20%
• Write Error Rate 20%
• Thermal Perturbation 20%
• Telegraphic Switching 20%
• Multi-state Switching 20%

Engineering

• Arrhenius 100%
• Magnetic Tunnel Junction 100%
• Duty Cycle 20%
• Building Block 20%
• Error Rate 20%
• Bias Voltage 20%
• Design Guideline 20%
• Heating Effect 20%
• Energy Barrier 20%
• Spiking Neuron 20%