Step buffer layer of Al_0.25Ga_0.75N/Al_0.08Ga_0.92N on P-InAlN gate normally-off high electron mobility transistors

Keyphrases

• Buffer Layer 100%
• InAlN 100%
• High Electron Mobility Transistor 100%
• Normally-off 100%
• AlGaN-GaN 66%
• Threshold Voltage 50%
• GaN HEMT 50%
• Drain Bias 50%
• Current Density 33%
• Gate Injection Transistor 33%
• Electrical Characteristics 16%
• Circuit Design 16%
• P-type 16%
• High Breakdown Voltage 16%
• Transistor 16%
• Transistor Device 16%
• Breakdown Voltage 16%
• Device Simulation 16%
• Maximum Current Density 16%
• High Threshold Voltage 16%
• Large-current-density 16%
• Induced Holes 16%
• Gate Modulation 16%
• High Operating Voltage 16%
• High Drain Current 16%
• Power Electronics 16%
• P-AlGaN 16%

Engineering

• Buffer Layer 100%
• Drain Bias 75%
• Breakdown Voltage 50%
• Simplifies 25%
• Circuit Design 25%
• Current Drain 25%
• Engineering 25%
• Operating Voltage 25%
• Power Electronics 25%

Material Science

• Transistor 100%
• Electron Mobility 100%
• Buffer Layer 100%
• Density 44%
• Electrical Property 11%
• Electronic Circuit 11%