Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors

Niraj M. Shrestha, Yi-Ming Li, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Fingerprint

Dive into the research topics of 'Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds