Statistical study of RRAM MLC SET variability induced by filament morphology

Chung Wei Hsu; Xin Zheng; Yi Wu; Tuo-Hung Hou; H. S.Philip Wong

doi:10.1109/IRPS.2017.7936320

Statistical study of RRAM MLC SET variability induced by filament morphology

Chung Wei Hsu, Xin Zheng, Yi Wu, Tuo-Hung Hou, H. S.Philip Wong

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d _G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I _coMp ) of 100 μ and larger RESET stopping voltage (V _reset ) of-4.5 V for smaller d _D and larger do with leaving less residual oxygen vacancies (Vo ⁺² ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.

Original language	English
Title of host publication	2017 International Reliability Physics Symposium, IRPS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5A3.1-5A3.5
Number of pages	5
ISBN (Electronic)	9781509066407
DOIs	https://doi.org/10.1109/IRPS.2017.7936320
State	Published - 30 May 2017
Event	2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States Duration: 2 Apr 2017 → 6 Apr 2017

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2017 International Reliability Physics Symposium, IRPS 2017
Country/Territory	United States
City	Monterey
Period	2/04/17 → 6/04/17

Keywords

Filament Morphology
RRAM
RTN
SET Variability
TDDB

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10.1109/IRPS.2017.7936320

Cite this

Hsu, C. W., Zheng, X., Wu, Y., Hou, T.-H., & Wong, H. S. P. (2017). Statistical study of RRAM MLC SET variability induced by filament morphology. In 2017 International Reliability Physics Symposium, IRPS 2017 (pp. 5A3.1-5A3.5). Article 7936320 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2017.7936320

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title = "Statistical study of RRAM MLC SET variability induced by filament morphology",

abstract = " This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I coMp ) of 100 μ and larger RESET stopping voltage (V reset ) of-4.5 V for smaller d D and larger do with leaving less residual oxygen vacancies (Vo +2 ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings. ",

keywords = "Filament Morphology, RRAM, RTN, SET Variability, TDDB",

author = "Hsu, {Chung Wei} and Xin Zheng and Yi Wu and Tuo-Hung Hou and Wong, {H. S.Philip}",

year = "2017",

month = may,

day = "30",

doi = "10.1109/IRPS.2017.7936320",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5A3.1--5A3.5",

booktitle = "2017 International Reliability Physics Symposium, IRPS 2017",

address = "美國",

note = "2017 International Reliability Physics Symposium, IRPS 2017 ; Conference date: 02-04-2017 Through 06-04-2017",

}

Hsu, CW, Zheng, X, Wu, Y, Hou, T-H & Wong, HSP 2017, Statistical study of RRAM MLC SET variability induced by filament morphology. in 2017 International Reliability Physics Symposium, IRPS 2017., 7936320, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 5A3.1-5A3.5, 2017 International Reliability Physics Symposium, IRPS 2017, Monterey, United States, 2/04/17. https://doi.org/10.1109/IRPS.2017.7936320

Statistical study of RRAM MLC SET variability induced by filament morphology. / Hsu, Chung Wei; Zheng, Xin; Wu, Yi et al.
2017 International Reliability Physics Symposium, IRPS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 5A3.1-5A3.5 7936320 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Statistical study of RRAM MLC SET variability induced by filament morphology

AU - Hsu, Chung Wei

AU - Zheng, Xin

AU - Wu, Yi

AU - Hou, Tuo-Hung

AU - Wong, H. S.Philip

PY - 2017/5/30

Y1 - 2017/5/30

N2 - This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I coMp ) of 100 μ and larger RESET stopping voltage (V reset ) of-4.5 V for smaller d D and larger do with leaving less residual oxygen vacancies (Vo +2 ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.

AB - This paper establishes the correlation between RRAM multilevel-cell (MLC) stochastic SET variability and random telegraph noise (RTN). We show that a smaller diameter (dD) of locally connecting/rupturing conductive filament (CF) and larger distance of gap (d G ) between CF and electrode demonstrate both steeper Weibull slope β with a relaxed SET-disturb margin by 0.4 V and 36x improvement in RTN robustness. This is achieved by lower current compliances (I coMp ) of 100 μ and larger RESET stopping voltage (V reset ) of-4.5 V for smaller d D and larger do with leaving less residual oxygen vacancies (Vo +2 ) in the gap region. Results from the Kinetic Monte Carlo (KMC) modeling also support these findings.

KW - Filament Morphology

KW - RRAM

KW - RTN

KW - SET Variability

KW - TDDB

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T3 - IEEE International Reliability Physics Symposium Proceedings

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BT - 2017 International Reliability Physics Symposium, IRPS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Reliability Physics Symposium, IRPS 2017

Y2 - 2 April 2017 through 6 April 2017

ER -

Statistical study of RRAM MLC SET variability induced by filament morphology

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