Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

Chia Hui Yu, Ming Hung Han, Hui Wen Cheng, Zhong Cheng Su, Yi-Ming Li*, Hiroshi Watanabe

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.

Original languageEnglish
Title of host publication15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
EditorsG Baccarani, M Rudan
PublisherIEEE
Pages153-156
Number of pages4
ISBN (Print)9781424476992
DOIs
StatePublished - 6 Dec 2010
Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
Duration: 6 Sep 20108 Sep 2010

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices
PublisherIEEE
ISSN (Print)1946-1569

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Country/TerritoryItaly
CityBologna
Period6/09/108/09/10

Keywords

  • 16-nmgate MOSFET
  • Emerging device
  • High-κ/metal gate
  • Modeling and simulation
  • Monte Carlo
  • Work-function fluctuation

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