Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

Chia Hui Yu; Ming Hung Han; Hui Wen Cheng; Zhong Cheng Su; Yi-Ming Li; Hiroshi Watanabe

doi:10.1109/SISPAD.2010.5604544

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

Chia Hui Yu, Ming Hung Han, Hui Wen Cheng, Zhong Cheng Su, Yi-Ming Li^*, Hiroshi Watanabe

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (V_th) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of V_th fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.

Original language	English
Title of host publication	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Editors	G Baccarani, M Rudan
Publisher	IEEE
Pages	153-156
Number of pages	4
ISBN (Print)	9781424476992
DOIs	https://doi.org/10.1109/SISPAD.2010.5604544
State	Published - 6 Dec 2010
Event	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy Duration: 6 Sep 2010 → 8 Sep 2010

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices
Publisher	IEEE
ISSN (Print)	1946-1569

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Country/Territory	Italy
City	Bologna
Period	6/09/10 → 8/09/10

Keywords

16-nmgate MOSFET
Emerging device
High-κ/metal gate
Modeling and simulation
Monte Carlo
Work-function fluctuation

Access to Document

10.1109/SISPAD.2010.5604544

Cite this

Yu, C. H., Han, M. H., Cheng, H. W., Su, Z. C., Li, Y.-M., & Watanabe, H. (2010). Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices. In G. Baccarani, & M. Rudan (Eds.), 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 153-156). Article 5604544 (International Conference on Simulation of Semiconductor Processes and Devices). IEEE. https://doi.org/10.1109/SISPAD.2010.5604544

Yu, Chia Hui ; Han, Ming Hung ; Cheng, Hui Wen et al. / Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices. 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. editor / G Baccarani ; M Rudan. IEEE, 2010. pp. 153-156 (International Conference on Simulation of Semiconductor Processes and Devices).

@inproceedings{1c16508503d44e10b61eae77df50d3f7,

title = "Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices",

abstract = "In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.",

keywords = "16-nmgate MOSFET, Emerging device, High-κ/metal gate, Modeling and simulation, Monte Carlo, Work-function fluctuation",

author = "Yu, {Chia Hui} and Han, {Ming Hung} and Cheng, {Hui Wen} and Su, {Zhong Cheng} and Yi-Ming Li and Hiroshi Watanabe",

year = "2010",

month = dec,

day = "6",

doi = "10.1109/SISPAD.2010.5604544",

language = "English",

isbn = "9781424476992",

series = "International Conference on Simulation of Semiconductor Processes and Devices",

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pages = "153--156",

editor = "G Baccarani and M Rudan",

booktitle = "15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010",

note = "15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 ; Conference date: 06-09-2010 Through 08-09-2010",

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Yu, CH, Han, MH, Cheng, HW, Su, ZC, Li, Y-M & Watanabe, H 2010, Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices. in G Baccarani & M Rudan (eds), 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010., 5604544, International Conference on Simulation of Semiconductor Processes and Devices, IEEE, pp. 153-156, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, Italy, 6/09/10. https://doi.org/10.1109/SISPAD.2010.5604544

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices. / Yu, Chia Hui; Han, Ming Hung; Cheng, Hui Wen et al.
15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. ed. / G Baccarani; M Rudan. IEEE, 2010. p. 153-156 5604544 (International Conference on Simulation of Semiconductor Processes and Devices).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

AU - Yu, Chia Hui

AU - Han, Ming Hung

AU - Cheng, Hui Wen

AU - Su, Zhong Cheng

AU - Li, Yi-Ming

AU - Watanabe, Hiroshi

PY - 2010/12/6

Y1 - 2010/12/6

N2 - In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.

AB - In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.

KW - 16-nmgate MOSFET

KW - Emerging device

KW - High-κ/metal gate

KW - Modeling and simulation

KW - Monte Carlo

KW - Work-function fluctuation

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M3 - Conference contribution

AN - SCOPUS:78649607062

SN - 9781424476992

T3 - International Conference on Simulation of Semiconductor Processes and Devices

SP - 153

EP - 156

BT - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010

A2 - Baccarani, G

A2 - Rudan, M

PB - IEEE

T2 - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010

Y2 - 6 September 2010 through 8 September 2010

ER -

Yu CH, Han MH, Cheng HW, Su ZC, Li YM , Watanabe H. Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices. In Baccarani G, Rudan M, editors, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. IEEE. 2010. p. 153-156. 5604544. (International Conference on Simulation of Semiconductor Processes and Devices). doi: 10.1109/SISPAD.2010.5604544

Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

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