TY - JOUR
T1 - STATISTICAL MODELING OF SILICON DIOXIDE RELIABILITY.
AU - Lee, Jack
AU - Chen, Ih Chin
AU - Hu, Chen-Ming
PY - 1988/1/1
Y1 - 1988/1/1
N2 - A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning.
AB - A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning.
UR - http://www.scopus.com/inward/record.url?scp=0023849054&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.1988.23440
DO - 10.1109/RELPHY.1988.23440
M3 - Conference article
AN - SCOPUS:0023849054
SP - 131
EP - 138
JO - Annual Proceedings - Reliability Physics (Symposium)
JF - Annual Proceedings - Reliability Physics (Symposium)
SN - 0099-9512
ER -