Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis

Jonathan Shaw; Tuo-Hung Hou; Hassan Raza; Edwin Chihchuan Kan

doi:10.1109/TED.2009.2024108

Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis

Jonathan Shaw^*, Tuo-Hung Hou, Hassan Raza, Edwin Chihchuan Kan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.

Original language	English
Article number	5164934
Pages (from-to)	1729-1735
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	8
DOIs	https://doi.org/10.1109/TED.2009.2024108
State	Published - Aug 2009

Keywords

3-D electrostatics
Nanocrystal (NC)
Nonvolatile memories
Programming window distribution

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10.1109/TED.2009.2024108

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title = "Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis",

abstract = "We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.",

keywords = "3-D electrostatics, Nanocrystal (NC), Nonvolatile memories, Programming window distribution",

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AU - Shaw, Jonathan

AU - Hou, Tuo-Hung

AU - Raza, Hassan

AU - Kan, Edwin Chihchuan

PY - 2009/8

Y1 - 2009/8

N2 - We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.

AB - We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.

KW - 3-D electrostatics

KW - Nanocrystal (NC)

KW - Nonvolatile memories

KW - Programming window distribution

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 5164934

ER -

Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis

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