Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants

Wen Li Sung; Han Tung Chang; Chieh Yang Chen; Pei Jung Chao; Yi-ming Li

doi:10.1109/NANO.2016.7751556

Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants

Wen Li Sung, Han Tung Chang, Chieh Yang Chen, Pei Jung Chao, Yi-ming Li

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	951-954
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751556
State	Published - 21 Nov 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 22 Aug 2016 → 25 Aug 2016

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	22/08/16 → 25/08/16

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10.1109/NANO.2016.7751556

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Sung, W. L., Chang, H. T., Chen, C. Y., Chao, P. J., & Li, Y. (2016). Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 951-954). Article 7751556 (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751556

Sung, Wen Li ; Chang, Han Tung ; Chen, Chieh Yang et al. / Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 951-954 (16th International Conference on Nanotechnology - IEEE NANO 2016).

@inproceedings{470322a1fc73464eb197b76c3e78d3e3,

title = "Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants",

abstract = "We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.",

author = "Sung, {Wen Li} and Chang, {Han Tung} and Chen, {Chieh Yang} and Chao, {Pei Jung} and Yi-ming Li",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751556",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

address = "United States",

}

Sung, WL, Chang, HT, Chen, CY, Chao, PJ & Li, Y 2016, Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751556, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 951-954, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 22/08/16. https://doi.org/10.1109/NANO.2016.7751556

Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. / Sung, Wen Li; Chang, Han Tung; Chen, Chieh Yang et al.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 951-954 7751556 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chang, Han Tung

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AU - Chao, Pei Jung

AU - Li, Yi-ming

PY - 2016/11/21

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AB - We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.

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M3 - Conference contribution

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T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

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PB - Institute of Electrical and Electronics Engineers Inc.

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Sung WL, Chang HT, Chen CY, Chao PJ, Li Y. Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 951-954. 7751556. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751556

Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants

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