TY - GEN
T1 - Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits
AU - Hwang, Chih Hong
AU - Li, Tien Yeh
AU - Han, Ming Hung
AU - Lee, Kuo Fu
AU - Cheng, Hui Wen
AU - Li, Yi-Ming
PY - 2009/9
Y1 - 2009/9
N2 - This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.
AB - This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.
KW - Circuit
KW - Coupled device-circuit simulation
KW - Emerging device technology
KW - Intrinsic parameter fluctuation
KW - Modeling and simulation
KW - Nanoscale MOSFET
UR - http://www.scopus.com/inward/record.url?scp=74349107928&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2009.5290239
DO - 10.1109/SISPAD.2009.5290239
M3 - Conference contribution
AN - SCOPUS:74349107928
SN - 9781424439492
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 399
EP - 102
BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Y2 - 9 September 2009 through 11 September 2009
ER -