Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Sekhar Reddy Kola; Yi-Ming Li; Min Hui Chuang; Kazuhiko Endo; Seiji Samukawa

doi:10.1109/EDTM55494.2023.10103120

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Sekhar Reddy Kola, Yi-Ming Li^*, Min Hui Chuang, Kazuhiko Endo, Seiji Samukawa

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103120
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

device modeling
gate-all-around
interface trap fluctuation
nanosheet
random dopant fluctuation
work function fluctuation

Access to Document

10.1109/EDTM55494.2023.10103120

Cite this

Kola, S. R., Li, Y.-M., Chuang, M. H., Endo, K., & Samukawa, S. (2023). Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103120

Kola, Sekhar Reddy ; Li, Yi-Ming ; Chuang, Min Hui et al. / Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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title = "Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes",

abstract = "In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.",

keywords = "device modeling, gate-all-around, interface trap fluctuation, nanosheet, random dopant fluctuation, work function fluctuation",

author = "Kola, {Sekhar Reddy} and Yi-Ming Li and Chuang, {Min Hui} and Kazuhiko Endo and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103120",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

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Kola, SR, Li, Y-M, Chuang, MH, Endo, K & Samukawa, S 2023, Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103120

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes. / Kola, Sekhar Reddy; Li, Yi-Ming; Chuang, Min Hui et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

AU - Kola, Sekhar Reddy

AU - Li, Yi-Ming

AU - Chuang, Min Hui

AU - Endo, Kazuhiko

AU - Samukawa, Seiji

PY - 2023

Y1 - 2023

N2 - In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

AB - In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

KW - device modeling

KW - gate-all-around

KW - interface trap fluctuation

KW - nanosheet

KW - random dopant fluctuation

KW - work function fluctuation

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DO - 10.1109/EDTM55494.2023.10103120

M3 - Conference contribution

AN - SCOPUS:85158135389

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

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Kola SR, Li YM, Chuang MH, Endo K, Samukawa S. Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103120

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

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Keywords

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