Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes

Sekhar Reddy Kola, Yiming Li*, Chieh Yang Chen, Min Hui Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), and their combinations. The explored devices affected by the WKF and its combination result in sizeable variability. Because of enigmatical interactions among the aforementioned random factors, overestimated variabilities occur if we only consider one random source each time, compared with the statistical 3D device simulation for full RDF, ITF and WKF at the same time. Notably, 10.78% and 103% overestimations are found for the threshold voltage and off-state current fluctuations.

Original languageEnglish
Title of host publication2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665409230
DOIs
StatePublished - 2022
Event2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
Duration: 18 Apr 202221 Apr 2022

Publication series

Name2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/TerritoryTaiwan
CityHsinchu
Period18/04/2221/04/22

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