Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

Chen Kuei Lee; Ying Yu Liu; Kun Ming Chen; Guo Wei Huang; Pei Wen Li; Horng Chih Lin

doi:10.1149/2162-8777/ac170e

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

Chen Kuei Lee, Ying Yu Liu, Kun Ming Chen, Guo Wei Huang, Pei Wen Li, Horng Chih Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (fT) and maximum oscillation frequency (fmax) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

Original language	English
Article number	075010
Number of pages	6
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	7
DOIs	https://doi.org/10.1149/2162-8777/ac170e
State	Published - Jul 2021

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title = "Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors",

abstract = "In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (fT) and maximum oscillation frequency (fmax) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.",

author = "Lee, {Chen Kuei} and Liu, {Ying Yu} and Chen, {Kun Ming} and Huang, {Guo Wei} and Li, {Pei Wen} and Lin, {Horng Chih}",

note = "Publisher Copyright: {\textcopyright} 2021 The Electrochemical Society ({"}ECS{"}). Published on behalf of ECS by IOP Publishing Limited.",

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T1 - Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

AU - Lee, Chen Kuei

AU - Liu, Ying Yu

AU - Chen, Kun Ming

AU - Huang, Guo Wei

AU - Li, Pei Wen

AU - Lin, Horng Chih

PY - 2021/7

Y1 - 2021/7

N2 - In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (fT) and maximum oscillation frequency (fmax) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

AB - In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (fT) and maximum oscillation frequency (fmax) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

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DO - 10.1149/2162-8777/ac170e

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SN - 2162-8769

VL - 10

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

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M1 - 075010

ER -

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

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