Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment Featuring High Footprint Current

Dong Ru Hsieh, Chia Chin Lee, Tien Sheng Chao*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Engineering & Materials Science

Chemical Compounds