Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1-xO₂FETs With NH₃Plasma Treatment Featuring High Footprint Current

Keyphrases

• Nanosheets 100%
• Gate-all-around 100%
• NH3 Plasma 100%
• Positive Gate Bias Stress 100%
• Stress Testing 50%
• 3D IC 50%
• Drive Current 50%
• Zirconium Dioxide 50%
• Oxygen Vacancy 50%
• Gate Stack 50%
• Circuit Application 50%
• Interface Traps 50%
• NH3 Plasma Treatment 50%
• Monolithic 3-D (M3-D) 50%
• Metal-oxide Interface 50%
• Stress Immunity 50%

Material Science

• Ferroelectric Material 100%
• Nanosheet 100%
• Field Effect Transistor 50%
• Electronic Circuit 50%
• Oxygen Vacancy 50%
• Zirconia 50%
• Stress Analysis 50%
• Metal-Oxide Interface 50%

Engineering

• Gate Bias 100%
• Nanosheet 100%
• Field Effect Transistor 50%
• Plasma Treatment 50%
• Oxygen Vacancy 50%
• Gate Stack 50%
• Integrated Circuit 50%
• Interface Trap 50%