Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment Featuring High Footprint Current

Dong Ru Hsieh; Chia Chin Lee; Tien Sheng Chao

doi:10.23919/SNW57900.2023.10183971

Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1-xO₂FETs With NH₃Plasma Treatment Featuring High Footprint Current

Dong Ru Hsieh, Chia Chin Lee, Tien Sheng Chao^*

^*Corresponding author for this work

Degree Program of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Stacked gate-all-around (GAA) nanosheet (NS) channel ferroelectric-HfrmxZr_1-rmxO2 (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and ZrO2/TiN interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies (rmVrmo) and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μ A/μ m, and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.

Original language	English
Title of host publication	2023 Silicon Nanoelectronics Workshop, SNW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	121-122
Number of pages	2
ISBN (Electronic)	9784863488083
DOIs	https://doi.org/10.23919/SNW57900.2023.10183971
State	Published - 2023
Event	26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 12 Jun 2023

Publication series

Name	2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 12/06/23

Access to Document

10.23919/SNW57900.2023.10183971

Cite this

Hsieh, D. R., Lee, C. C., & Chao, T. S. (2023). Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1-xO₂FETs With NH₃Plasma Treatment Featuring High Footprint Current. In 2023 Silicon Nanoelectronics Workshop, SNW 2023 (pp. 121-122). (2023 Silicon Nanoelectronics Workshop, SNW 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW57900.2023.10183971

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title = "Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment Featuring High Footprint Current",

abstract = "Stacked gate-all-around (GAA) nanosheet (NS) channel ferroelectric-HfrmxZr_1-rmxO2 (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and ZrO2/TiN interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies (rmVrmo) and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μ A/μ m, and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.",

author = "Hsieh, {Dong Ru} and Lee, {Chia Chin} and Chao, {Tien Sheng}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",

year = "2023",

doi = "10.23919/SNW57900.2023.10183971",

language = "English",

series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "121--122",

booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

address = "美國",

}

Hsieh, DR, Lee, CC & Chao, TS 2023, Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1-xO₂FETs With NH₃Plasma Treatment Featuring High Footprint Current. in 2023 Silicon Nanoelectronics Workshop, SNW 2023. 2023 Silicon Nanoelectronics Workshop, SNW 2023, Institute of Electrical and Electronics Engineers Inc., pp. 121-122, 26th Silicon Nanoelectronics Workshop, SNW 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/SNW57900.2023.10183971

Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hf_xZr_1-xO₂FETs With NH₃Plasma Treatment Featuring High Footprint Current. / Hsieh, Dong Ru; Lee, Chia Chin; Chao, Tien Sheng.
2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 121-122 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Chia Chin

AU - Chao, Tien Sheng

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N2 - Stacked gate-all-around (GAA) nanosheet (NS) channel ferroelectric-HfrmxZr_1-rmxO2 (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and ZrO2/TiN interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies (rmVrmo) and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μ A/μ m, and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.

AB - Stacked gate-all-around (GAA) nanosheet (NS) channel ferroelectric-HfrmxZr_1-rmxO2 (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and ZrO2/TiN interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies (rmVrmo) and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μ A/μ m, and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.

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