Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen; Ta Ya Chu; Jenn-Fang Chen; Chien Ying Su; Chin H. Chen

doi:10.1063/1.2335374

Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen^*, Ta Ya Chu, Jenn-Fang Chen, Chien Ying Su, Chin H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

157 Scopus citations

Abstract

Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs₂O dopant between indium-tin oxide bottom cathode and Alq₃, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm². The 20% decay lifetime (t₈₀) of Cs ₂O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

Original language	English
Article number	053518
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2335374
State	Published - 2006

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title = "Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement",

abstract = "Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).",

author = "Chen, {Szu Yi} and Chu, {Ta Ya} and Jenn-Fang Chen and Su, {Chien Ying} and Chen, {Chin H.}",

year = "2006",

doi = "10.1063/1.2335374",

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volume = "89",

journal = "Applied Physics Letters",

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T1 - Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

AU - Chen, Szu Yi

AU - Chu, Ta Ya

AU - Chen, Jenn-Fang

AU - Su, Chien Ying

AU - Chen, Chin H.

PY - 2006

Y1 - 2006

N2 - Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

AB - Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053518

ER -

Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

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