Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen*, Ta Ya Chu, Jenn-Fang Chen, Chien Ying Su, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

156 Scopus citations

Abstract

Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

Original languageEnglish
Article number053518
JournalApplied Physics Letters
Volume89
Issue number5
DOIs
StatePublished - 2006

Fingerprint

Dive into the research topics of 'Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement'. Together they form a unique fingerprint.

Cite this