Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

Meng Huan Ho; Ming Ta Hsieh; Jenn-Fang Chen; Kuan Heng Lin; Chin H. Chen

doi:10.1889/1.3256826

Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

Meng Huan Ho, Ming Ta Hsieh, Jenn-Fang Chen, Kuan Heng Lin, Chin H. Chen

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO₃) into MADN and 15% cesium carbonate (Cs₂CO₃) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

Original language	English
Pages (from-to)	503-506
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256826
State	Published - 1 Jan 2009
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 15 Oct 2009 → 16 Oct 2009

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title = "Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers",

abstract = "A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.",

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T1 - Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

AU - Ho, Meng Huan

AU - Hsieh, Ming Ta

AU - Chen, Jenn-Fang

AU - Lin, Kuan Heng

AU - Chen, Chin H.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

AB - A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

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SP - 503

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2009 Vehicles and Photons Symposium

Y2 - 15 October 2009 through 16 October 2009

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Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

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