Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih Hsiang Chang, Ting Meng, Qun Zhang*, Po-Tsun Liu, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2V−1s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.

Original languageEnglish
Article number1600465
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number2
DOIs
StatePublished - Feb 2017

Keywords

  • amorphous materials
  • annealing ambient
  • doping
  • indium tin oxide
  • thin-film transistors
  • tungsten

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