Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu; Chih Hsiang Chang; Ting Meng; Qun Zhang; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/pssa.201600465

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih Hsiang Chang, Ting Meng, Qun Zhang^*, Po-Tsun Liu, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O ₂ , and N ₂ ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O ₂ and N ₂ ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O ₂ , the TFT device with saturation mobility of 27.55 cm ² V ⁻¹ s ⁻¹ , threshold voltage of 0.5 V and drain current on-off ratio of 10 ⁸ is obtained. After an applied V _GS of 25 and −25 V for 2000 s in darkness, the values of ΔV _th are 4.5 and −0.92 V, respectively.

Original language	English
Article number	1600465
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	2
DOIs	https://doi.org/10.1002/pssa.201600465
State	Published - Feb 2017

Keywords

amorphous materials
annealing ambient
doping
indium tin oxide
thin-film transistors
tungsten

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title = "Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions",

abstract = " Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O 2 , and N 2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O 2 and N 2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O 2 , the TFT device with saturation mobility of 27.55 cm 2 V −1 s −1 , threshold voltage of 0.5 V and drain current on-off ratio of 10 8 is obtained. After an applied V GS of 25 and −25 V for 2000 s in darkness, the values of ΔV th are 4.5 and −0.92 V, respectively. ",

keywords = "amorphous materials, annealing ambient, doping, indium tin oxide, thin-film transistors, tungsten",

author = "Mingyue Qu and Chang, {Chih Hsiang} and Ting Meng and Qun Zhang and Po-Tsun Liu and Shieh, {Han Ping D.}",

year = "2017",

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doi = "10.1002/pssa.201600465",

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TY - JOUR

T1 - Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

AU - Qu, Mingyue

AU - Chang, Chih Hsiang

AU - Meng, Ting

AU - Zhang, Qun

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2017/2

Y1 - 2017/2

N2 - Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O 2 , and N 2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O 2 and N 2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O 2 , the TFT device with saturation mobility of 27.55 cm 2 V −1 s −1 , threshold voltage of 0.5 V and drain current on-off ratio of 10 8 is obtained. After an applied V GS of 25 and −25 V for 2000 s in darkness, the values of ΔV th are 4.5 and −0.92 V, respectively.

AB - Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O 2 , and N 2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O 2 and N 2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O 2 , the TFT device with saturation mobility of 27.55 cm 2 V −1 s −1 , threshold voltage of 0.5 V and drain current on-off ratio of 10 8 is obtained. After an applied V GS of 25 and −25 V for 2000 s in darkness, the values of ΔV th are 4.5 and −0.92 V, respectively.

KW - amorphous materials

KW - annealing ambient

KW - doping

KW - indium tin oxide

KW - thin-film transistors

KW - tungsten

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DO - 10.1002/pssa.201600465

M3 - Article

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SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 2

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ER -

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Abstract

Keywords

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