Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu; Chih Hsiang Chang; Ting Meng; Qun Zhang; Po-Tsun Liu; Han Ping D. Shieh

doi:10.1002/pssa.201600465

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih Hsiang Chang, Ting Meng, Qun Zhang^*, Po-Tsun Liu, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O₂, and N₂ ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O₂ and N₂ ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O₂, the TFT device with saturation mobility of 27.55 cm²V⁻¹s⁻¹, threshold voltage of 0.5 V and drain current on-off ratio of 10⁸ is obtained. After an applied V_GS of 25 and −25 V for 2000 s in darkness, the values of ΔV_th are 4.5 and −0.92 V, respectively.

Original language	English
Article number	1600465
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	2
DOIs	https://doi.org/10.1002/pssa.201600465
State	Published - Feb 2017

Keywords

amorphous materials
annealing ambient
doping
indium tin oxide
thin-film transistors
tungsten

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title = "Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions",

abstract = "Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2V−1s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.",

keywords = "amorphous materials, annealing ambient, doping, indium tin oxide, thin-film transistors, tungsten",

author = "Mingyue Qu and Chang, {Chih Hsiang} and Ting Meng and Qun Zhang and Po-Tsun Liu and Shieh, {Han Ping D.}",

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T1 - Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

AU - Qu, Mingyue

AU - Chang, Chih Hsiang

AU - Meng, Ting

AU - Zhang, Qun

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2017/2

Y1 - 2017/2

N2 - Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2V−1s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.

AB - Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2V−1s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.

KW - amorphous materials

KW - annealing ambient

KW - doping

KW - indium tin oxide

KW - thin-film transistors

KW - tungsten

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DO - 10.1002/pssa.201600465

M3 - Article

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SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 2

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ER -

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

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Keywords

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