Stability optimization of monolithic 3-D MoS2-n/WSe2-p SRAM cells for superthreshold and near-/sub-threshold applications

Chang Hung Yu; Pin Su; Ching Te Chuang

doi:10.1109/S3S.2016.7804396

Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications

Chang Hung Yu, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509043903
DOIs	https://doi.org/10.1109/S3S.2016.7804396
State	Published - 2016
Event	2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 - Burlingame, United States Duration: 10 Oct 2016 → 13 Oct 2016

Publication series

Name	2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

Conference

Conference	2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Country/Territory	United States
City	Burlingame
Period	10/10/16 → 13/10/16

Access to Document

10.1109/S3S.2016.7804396

Cite this

Yu, C. H., Su, P., & Chuang, C. T. (2016). Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications. In 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 Article 7804396 (2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2016.7804396

Yu, Chang Hung ; Su, Pin ; Chuang, Ching Te. / Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016).

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title = "Stability optimization of monolithic 3-D MoS2-n/WSe2-p SRAM cells for superthreshold and near-/sub-threshold applications",

author = "Yu, {Chang Hung} and Pin Su and Chuang, {Ching Te}",

year = "2016",

doi = "10.1109/S3S.2016.7804396",

language = "English",

series = "2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016",

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note = "2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016 ; Conference date: 10-10-2016 Through 13-10-2016",

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Yu, CH, Su, P & Chuang, CT 2016, Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications. in 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016., 7804396, 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016, Burlingame, United States, 10/10/16. https://doi.org/10.1109/S3S.2016.7804396

Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications. / Yu, Chang Hung; Su, Pin; Chuang, Ching Te.
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7804396 (2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yu, Chang Hung

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2016

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DO - 10.1109/S3S.2016.7804396

M3 - Conference contribution

AN - SCOPUS:85011269382

T3 - 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

BT - 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

Y2 - 10 October 2016 through 13 October 2016

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Yu CH, Su P, Chuang CT. Stability optimization of monolithic 3-D MoS₂-n/WSe₂-p SRAM cells for superthreshold and near-/sub-threshold applications. In 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7804396. (2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016). doi: 10.1109/S3S.2016.7804396