Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang*, Zhao Yang, Mingyue Qu, Ruofan Fu, Po Tsun Liu*, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Issue number1
StatePublished - 2018
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 20 May 201825 May 2018


  • sputtering
  • stability
  • thin film transistor
  • tungsten-doped indium oxide


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