Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang; Zhao Yang; Mingyue Qu; Ruofan Fu; Po Tsun Liu; Han Ping D. Shieh

doi:10.1002/SDTP.12531

Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang^*, Zhao Yang, Mingyue Qu, Ruofan Fu, Po Tsun Liu^*, Han Ping D. Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

Original language	English
Pages (from-to)	225-227
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	49
Issue number	1
DOIs	https://doi.org/10.1002/SDTP.12531
State	Published - 2018
Event	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018

Keywords

sputtering
stability
thin film transistor
tungsten-doped indium oxide

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10.1002/SDTP.12531

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title = "Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors",

abstract = "The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.",

keywords = "sputtering, stability, thin film transistor, tungsten-doped indium oxide",

author = "Qun Zhang and Zhao Yang and Mingyue Qu and Ruofan Fu and Liu, {Po Tsun} and Shieh, {Han Ping D.}",

note = "Publisher Copyright: {\textcopyright} 2018 SID.; SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 ; Conference date: 20-05-2018 Through 25-05-2018",

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T1 - Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

AU - Zhang, Qun

AU - Yang, Zhao

AU - Qu, Mingyue

AU - Fu, Ruofan

AU - Liu, Po Tsun

AU - Shieh, Han Ping D.

PY - 2018

Y1 - 2018

N2 - The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

AB - The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

KW - sputtering

KW - stability

KW - thin film transistor

KW - tungsten-doped indium oxide

UR - http://www.scopus.com/inward/record.url?scp=85072773588&partnerID=8YFLogxK

U2 - 10.1002/SDTP.12531

DO - 10.1002/SDTP.12531

M3 - Conference article

AN - SCOPUS:85072773588

SN - 0097-966X

VL - 49

SP - 225

EP - 227

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

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Keywords

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