Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Jethro Oroceo Gallardo; Brice De Jaeger; Sachidananda Dash; Shun Wei Tang; Thanh Nga Tran; Dirk Wellekens; Benoit Bakeroot; Stefaan Decoutere; Tian Li Wu

doi:10.1109/IPFA53173.2021.9617330

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.

Original language	English
Title of host publication	2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781665439886
DOIs	https://doi.org/10.1109/IPFA53173.2021.9617330
State	Published - 2021
Event	2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021 - Singapore, Singapore Duration: 15 Sep 2021 → 15 Oct 2021

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2021-September

Conference

Conference	2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
Country/Territory	Singapore
City	Singapore
Period	15/09/21 → 15/10/21

Keywords

GaN
Monolithic Integration
Schottky Barrier Diode
p-GaN HEMTs

Access to Document

10.1109/IPFA53173.2021.9617330

Cite this

Gallardo, J. O., De Jaeger, B., Dash, S., Tang, S. W., Tran, T. N., Wellekens, D., Bakeroot, B., Decoutere, S., & Wu, T. L. (2021). Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology. In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021 (pp. 1-6). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2021-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA53173.2021.9617330

Gallardo, Jethro Oroceo ; De Jaeger, Brice ; Dash, Sachidananda et al. / Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology. 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 1-6 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology",

abstract = "In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.",

keywords = "GaN, Monolithic Integration, Schottky Barrier Diode, p-GaN HEMTs",

author = "Gallardo, {Jethro Oroceo} and {De Jaeger}, Brice and Sachidananda Dash and Tang, {Shun Wei} and Tran, {Thanh Nga} and Dirk Wellekens and Benoit Bakeroot and Stefaan Decoutere and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021 ; Conference date: 15-09-2021 Through 15-10-2021",

year = "2021",

doi = "10.1109/IPFA53173.2021.9617330",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Gallardo, JO, De Jaeger, B, Dash, S, Tang, SW, Tran, TN, Wellekens, D, Bakeroot, B, Decoutere, S & Wu, TL 2021, Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology. in 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2021-September, Institute of Electrical and Electronics Engineers Inc., pp. 1-6, 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021, Singapore, Singapore, 15/09/21. https://doi.org/10.1109/IPFA53173.2021.9617330

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology. / Gallardo, Jethro Oroceo; De Jaeger, Brice; Dash, Sachidananda et al.
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1-6 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2021-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

AU - Gallardo, Jethro Oroceo

AU - De Jaeger, Brice

AU - Dash, Sachidananda

AU - Tang, Shun Wei

AU - Tran, Thanh Nga

AU - Wellekens, Dirk

AU - Bakeroot, Benoit

AU - Decoutere, Stefaan

AU - Wu, Tian Li

PY - 2021

Y1 - 2021

N2 - In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.

AB - In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.

KW - GaN

KW - Monolithic Integration

KW - Schottky Barrier Diode

KW - p-GaN HEMTs

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DO - 10.1109/IPFA53173.2021.9617330

M3 - Conference contribution

AN - SCOPUS:85122949970

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021

Y2 - 15 September 2021 through 15 October 2021

ER -

Gallardo JO, De Jaeger B, Dash S, Tang SW, Tran TN, Wellekens D et al. Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology. In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1-6. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA53173.2021.9617330

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

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