@inproceedings{6fe96eb9785a4b1883c44b202c3fcf19,
title = "Stability of High performance p-type SnO TFTs",
abstract = "High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.",
author = "Zhong, \{C. W.\} and Tsai, \{H. Y.\} and Horng-Chih Lin and Liu, \{K. C.\} and Huang, \{T. Y.\}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/IPFA.2015.7224339",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "84--87",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
address = "美國",
}