Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

Zhao Yang; Ting Meng; Qun Zhang; Han-Ping Shieh

doi:10.1109/LED.2016.2524417

Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

Zhao Yang , Ting Meng, Qun Zhang^*, Han-Ping Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.

Original language	English
Pages (from-to)	437-440
Journal	Ieee Electron Device Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/LED.2016.2524417
State	Published - Apr 2016

Keywords

Illumination stability; indium-tungstenoxide (IWO); thin-film transistors (TFTs)

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10.1109/LED.2016.2524417

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title = "Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination",

abstract = "Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.",

keywords = "Illumination stability; indium-tungstenoxide (IWO); thin-film transistors (TFTs)",

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doi = "10.1109/LED.2016.2524417",

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T1 - Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

AU - Yang , Zhao

AU - Meng, Ting

AU - Zhang, Qun

AU - Shieh, Han-Ping

PY - 2016/4

Y1 - 2016/4

N2 - Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.

AB - Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.

KW - Illumination stability; indium-tungstenoxide (IWO); thin-film transistors (TFTs)

U2 - 10.1109/LED.2016.2524417

DO - 10.1109/LED.2016.2524417

M3 - Article

SN - 0741-3106

VL - 37

SP - 437

EP - 440

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 4

ER -

Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

Abstract

Keywords

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