SPUTTERING OF PtSi AND NiSi.

J. M. Poate*, W. L. Brown, R. Homer, W. M. Augustyniak, J. W. Mayer, King-Ning Tu, W. F. van der Weg

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Absolute sputtering yields have been obtained, by Rutherford scattering, for the constituents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields. No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 A surface layer substantially enriched with Pt.

Original languageEnglish
Pages345-334
Number of pages12
StatePublished - 1 Jan 1975
EventProc, 6th Int Conf on At Collisions, in Solids - Amsterdam, Holland
Duration: 22 Sep 197526 Sep 1975

Conference

ConferenceProc, 6th Int Conf on At Collisions, in Solids
CityAmsterdam, Holland
Period22/09/7526/09/75

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