Absolute sputtering yields have been obtained, by Rutherford scattering, for the constituents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields. No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 A surface layer substantially enriched with Pt.
|Number of pages||12|
|State||Published - 1 Jan 1975|
|Event||Proc, 6th Int Conf on At Collisions, in Solids - Amsterdam, Holland|
Duration: 22 Sep 1975 → 26 Sep 1975
|Conference||Proc, 6th Int Conf on At Collisions, in Solids|
|Period||22/09/75 → 26/09/75|