This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.
|Number of pages||4|
|State||Published - Sep 2001|
|Event||9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States|
Duration: 25 Sep 2001 → 29 Sep 2001
|Conference||9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001|
|Period||25/09/01 → 29/09/01|