Abstract
In this work, a simple but accurate circuit model, which can be incorporated into circuit simulation programs such as SPICE, for field emission triode (FET) is developed. The model is based on the Fowler-Nordheim (F-N) J-E relationship but takes into account the charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model.
Original language | English |
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Pages | 62-66 |
Number of pages | 5 |
DOIs | |
State | Published - 1996 |
Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 7 Jul 1996 → 12 Jul 1996 |
Conference
Conference | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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City | St.Petersburg, Russia |
Period | 7/07/96 → 12/07/96 |