Spectroscopy and reactions of hydrazoic acid on silicon single crystal surfaces. (II). HN3 and DN3 on Si(100)

Jason C.S. Chu*, Yue Bu, Ming-Chang Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations


Hydrazoic acid (HN3) was employed for the first time as a nitrogen source for nitridation of Si surfaces. Its spectroscopy and reactions on different low Miller index surfaces have been investigated with XPS, UPS (X-ray and ultra-violet photoelectron spectroscopy), AES (Auger electron spectroscopy) and HREELS (high resolution electron energy loss spectroscopy) at temperatures between 120 and 1350 K. This study focuses on the spectroscopy and reactions on the Si(100) surface. HN3 was found to absorb molecularly on these surfaces since all molecular vibrational peaks such as the HN-NN stretching vibration at 150 meV, the HNN=N stretching vibration at 270 meV and the H-N3 stretching vibration at 415 meV could be clearly observed by HREELS. These assignments were confirmed by an isotopic study using DN3. Warming the surface from 120 to 250 K caused HN3 to desorb as well as to decompose into N2 NH, which further dissociated to produce N and H as the surface was annealed from 580 to 800 K. The presence of H adatoms was revealed by the appearance of the Si-H stretching vibration at 267 meV. At Ts > 800 K, H atoms began to desorb, while N remained on the surface forming Si3N4 at Ts ≡ 1350 K. These observations were fully corroborated by UPS, XPS and AES data. The results of AES and UPS analyses also indicate that nitrogen could diffuse into the bulk of Si(100), similar to the Si(110) case.

Original languageEnglish
Title of host publicationInternational SAMPE Electronics Conference
Number of pages11
StatePublished - 1 Dec 1992
Event6th International SAMPE Electronics Conference - Baltimore, MD, USA
Duration: 22 Jun 199225 Jun 1992


Conference6th International SAMPE Electronics Conference
CityBaltimore, MD, USA


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